The authors demonstrate the direct epitaxial growth of high-quality InGaAs/GaAs quantum dots on a silicon substrate using a GaP buffer layer. The quantum dots exhibit excellent single-photon emission properties, including high photon extraction efficiency. Finite-element method simulations performed with JCMsuite were used to compute and verify the expected photon extraction efficiency of the planar sample design with a distributed Bragg reflector backside mirror.
I. Limame, et al. High-quality single InGaAs/GaAs quantum dot growth on a silicon substrate for quantum photonic applications. Optica Quantum, Vol. 2, 117 (2024).